high voltage npn transistor APT13003L data sheet 1 aug. 2011 rev 1. 1 bcd semiconductor manufacturing limited general description the APT13003L series are high voltage, high speed switching npn power transistor specially designed for off-line switch mode power supplies with low output power. the APT13003L series is available in to-92 package. features high switching speed high collector-emitter voltage low cost applications battery chargers for mobile phone power supply for dvd/stb figure 1. package types of APT13003L figure 2. pin configurations of APT13003L (top view) pin configuration z package to-92 1 2 3 (to-92 (ammo package)) base emitter collector (ammo packing)
high voltage npn transistor APT13003L data sheet 2 aug. 2011 rev 1. 1 bcd semiconductor manufacturing limited parameter symbol value unit collector-emitter voltage v ces 700 v collector-emitter voltage v ceo 450 v emitter-base voltage v ebo 9v collector current i c 0.8 a collector peak current i cm 1.6 a base current i b 0.4 a base peak current i bm 0.8 a power dissipation, t a =25 o c p tot 0.8 w operating junction temperature 150 o c storage temperature range -55 to 150 o c ordering information package part number marking id packing type to-92 APT13003Lztr-g1 13003lz-g1 ammo bcd semiconductor's products, as designated with "g1" suffix in the part number, are rohs compliant and green. note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability. absolute maximum ratings (note 1) circuit type l: APT13003L tr: ammo package z: to-92 g1: green apt13003 -
high voltage npn transistor APT13003L 3 aug. 2011 rev 1. 1 bcd semiconductor manufacturing limited data sheet parameter symbol value unit thermal resistance (junction-to-ambient) ja 156.25 o c/w thermal characteristics parameter symbol conditions min typ max unit collector cut-off current (v be =-1.5v) i cev v ce =700v 10 a collector-emitter sustaining vo l t a g e ( i b =0) v ceo (sus) i c =0.1ma 450 v collector-emitter saturation vo l t a g e v ce (sat) i c =200ma, i b =40ma 0.5 v dc current gain h fe i c =100ma, v ce =10v 15 23 40 i c =300ma, v ce =10v 6 15 30 ( t c =25 o c, unless otherw ise specified.) electrical characteristics
high voltage npn transistor APT13003L data sheet 4 aug. 2011 rev 1. 1 bcd semiconductor manufacturing limited typical performance characteristics 0.01 0.1 1 0 5 10 15 20 25 30 35 t j =25 0 c t j =125 0 c dc current gain collector current(a) v ce =5v figure 6. dc current gain figure 3. safe operating areas figure 5. static characterstics 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 power derating factor(%) case temperature tc( 0 c) figure 4. power derating curve 024681012 0.0 0.1 0.2 0.3 0.4 0.5 0.6 i b =40ma i b =5ma i b =10ma i b =15ma i b =20ma i b =25ma i b =30ma i b =35ma i b =45ma cllector current ic (a) collector-emitter voltage (v) i b =50ma 1 10 100 1000 10 1 0.0001 0.001 0.01 collector current (a) collector-emitter clamp voltage (v) 0.1
high voltage npn transistor APT13003L 5 aug. 2011 rev 1. 1 bcd semiconductor manufacturing limited data sheet typical performance ch aracteristics (continued) figure 8. base-emitter saturation voltage figure 7. collector-emitter saturation region 0.1 1 0.01 0.1 1 10 100 t j =25 0 c t j =125 0 c collector-emitter voltage (v) collector current (a) 0.05 h fe =5 0.1 1 0.5 0.6 0.7 0.8 0.9 1.0 t j =25 0 c t j =125 0 c base-emitter voltage (v) collector current (a) 0.05 h fe =5
high voltage npn transistor APT13003L data sheet 6 aug. 2011 rev 1. 1 bcd semiconductor manufacturing limited to-92 (ammo packing) unit: mm(inch) mechanical dimens ions (continuted) 4.300(0.169) 4.700(0.185) 1 2.500(0.492) 1 4.500(0.571) 2.540(0. 100 ) ty p 1.270(0. 050 ) typ 0. (0. 015) 0. 550 (0.022 ) 4.400(0. 173 ) 4. 800 ( 0. 189 ) 3. 430(0. 135 ) min 0. 320(0. 013 ) 0 . 510(0. 020) 0. 000(0.000 ) 0. 380(0. 015 ) max 1. 100(0. 043 1. 400(0. 055 ) 3.300(0.130) 3.800(0.150) 1. 600(0. 063) ) 380 2.500(0. 098 ) 4.000 ( 0.157 ) 13.000(0. 512 ) 15.000 ( 0.591 )
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
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